Electronic device and method of manufacturing semiconductor device
AssigneeSony Corporation
InventorMao Katsuhara
Life of this patent
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Abstract
There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode on a base;
- forming a gate insulating layer on the base and the gate electrode;
- forming a pair of source/drain electrodes on the gate insulating layer;
- forming charge-injection precursor layers of an organic compound on the source/drain electrodes;
- performing oxidation on the charge-injection precursor layers to form charge-injection layers having a higher electric conductivity than the charge-injection precursor layers;
- forming a channel region of an organic semiconductor material on the gate insulating layer between the pair of source/drain electrodes;
- and
- forming channel extension regions of the organic semiconductor material above the source/drain electrodes and charge-injection layers.
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode on a base;
- forming a gate insulating layer on the base and the gate electrode;
- forming a pair of source/drain electrodes on the gate insulating layer;
- forming charge-injection precursor layers of an organic compound on the source/drain electrodes;
- performing oxidation on the charge-injection precursor layers to form charge-injection layers;
- forming a channel formation region of an organic semiconductor material on the gate insulating layer between the pair of source/drain electrodes;
- and
- forming channel extension regions of the organic semiconductor material above the source/drain electrodes and charge-injection layers,
- wherein the organic compound comprises at least one organic compound selected from the group consisting of:
- a Weitz type oxidation-reduction based organic compound, an organic compound having a cyclic structure in which the number of π electrons is 4n+3 (n is a positive integer), an organic compound having a dichalcogen five-membered ring, and an organic compound having a monochalcogen six-membered ring.
Dependencies are inferred from the claim text.