Method of fabricating a 3D integrated electronic device structure including increased thermal dissipation capabilities
AssigneeGeneral Electric Company
InventorsKaustubh Ravindra Nagarkar, Christopher Fred Keimel
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Abstract
A method of fabricating a microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is physically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.
Claims15
A method comprising:
- providing a three-dimensional (3D) integrated chip assembly, the method of providing the chip assembly comprising;
- providing a device substrate having a first main surface and a second main surface, the device substrate including a plurality of input/output connections on at least one of the first main surface and the second main surface;
- disposing a MEMS relay comprising one or more heat generating elements on the device substrate;
- bonding a cap layer to the device substrate, the cap layer having a first main surface and a second main surface;
- disposing a sealing ring about the MEMS relay;
- forming a hermetic seal about the MEMS relay, the hermetic seal at least partially defined by the device substrate, the cap layer and the sealing ring and wherein the sealing ring is not in electrical communication with the MEMS relay and the device substrate;
- and
- providing a substrate including a plurality of input/output connections;
- and
- flip chip bonding the three-dimensional (3D) integrated chip assembly to the substrate to form an apparatus,
- wherein the apparatus provides a plurality of electrically and thermally conductive paths through the three-dimensional (3D) integrated chip assembly to dissipate heat generated within the apparatus and provide electrical connections to the MEMS relay.
A method comprising:
- providing a three-dimensional (3D) integrated chip assembly comprising;
- providing a device substrate including a MEMS relay comprising one or more integrated circuits disposed on the device substrate;
- bonding a cap layer to the device substrate, the cap layer comprising a semiconductor material;
- disposing a sealing ring about the MEMS relay;
- forming a hermetic seal about the MEMS relay, the hermetic seal at least partially defined by the device substrate, the cap layer and the sealing ring and wherein the hermetic seal is not in electrical communication with the MEMS relay;
- flip chip bonding the three-dimensional (3D) integrated chip assembly to a substrate to form an apparatus;
- and
- positioning a heat spreader proximate the three-dimensional (3D) integrated chip assembly via a thermal interface material (TIM) for facilitating dissipation of heat from the apparatus,
- wherein the apparatus provides a plurality of electrically and thermally conductive paths through the three-dimensional (3D) integrated chip assembly to dissipate heat generated within the apparatus and provide electrical connections to the MEMS relay.
A method comprising:
- providing a MEMS relay device including a cap layer, a device substrate, a sealing ring and a hermetic seal formed about the MEMS relay and at least partially defined by the cap layer, the device substrate and the sealing ring and wherein the sealing ring is not in electrical communication with the MEMS relay device and the device substrate;
- and
- providing a substrate;
- flip chip bonding the MEMS relay device to the substrate.
Dependencies are inferred from the claim text.