Method of fabricating semiconductor die using handling layer

A method of fabricating a semiconductor die comprising:

• forming one or more semiconductor layers on a substrate;
• defining a plurality of semiconductor dies on the substrate separated by streets in the semiconductor layers;
• forming a first handling layer on the semiconductor layers;
• forming a plurality of stop electroplating (EP) areas in the streets;
• forming a plurality of metal layers on the first handling layer with the stop EP areas preventing metal deposition in the streets;
• removing the stop EP areas;
• removing at least a portion of the first handling layer in the streets;
• and
• removing the substrate to expose a surface of the semiconductor layers.

A method of fabricating a semiconductor die comprising:

• forming one or more semiconductor layers on a substrate;
• defining a plurality of semiconductor dies on the substrate separated by streets in the semiconductor layers;
• forming a handling layer on the semiconductor layers, wherein a thickness of the first handling layer is dependent on a hardness thereof;
• forming a plurality of metal layers on the handling layer;
• wherein the forming the first handling layer step configures the first handling layer as a rigid support structure for subsequent processing.