Semiconductor light emitting device and fabrication method for semiconductor light emitting device
AssigneesFujitsu Limited, The University of Tokyo
InventorsNobuaki Hatori, Tsuyoshi Yamamoto, Hisao Sudo, Yasuhiko Arakawa
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Abstract
A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.
Claims8
A fabrication method for a semiconductor light emitting device, comprising:
- forming a lower cladding layer over a GaAs substrate;
- forming an active layer over the lower cladding layer;
- forming an InGaAs etching stop layer on a GaAs layer or an AlGaAs layer, the InGaAs etching stop layer having a band gap greater than that of the active layer over the active layer;
- forming an AlGaAs upper cladding layer on the InGaAs etching stop layer;
- exposing the InGaAs etching stop layer by selectively etching the AlGaAs upper cladding layer;
- and
- removing the InGaAs etching stop layer exposed by the etching,
- wherein a ridge structure formed in the exposing and the removing includes the AlGaAs upper cladding layer and the InGaAs etching stop layer, and the upper side of the GaAs layer or the AlGaAs layer is exposed on opposite sides of the ridge structure.
Dependencies are inferred from the claim text.