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US 8,802,465 B2Granted
Method for handling a semiconductor wafer assembly
AssigneeSemiLEDS Optoelectronics Co., Ltd.
InventorsTrung Tri Doan, Chen-Fu Chu
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Abstract
Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.
Claims10
A method comprising:
- providing a wafer assembly comprising a plurality of semiconductor dies on a carrier substrate, each die comprising a multi-layer epitaxial structure;
- depositing a plurality of metal layers on the semiconductor dies configured as a metal substrate, the metal layers comprising:
- a first stress-reducing layer on the epitaxial structure comprising a first material having a first hardness and a first thickness, with the first material and the first thickness selected to minimize cracking of the epitaxial structure;
- a harder layer on the first stress-reducing layer comprising a second material having a second hardness greater than the first hardness and a second thickness, with the second material and the second thickness selected to allow handling of the wafer assembly without cracking of the epitaxial structure;
- and
- a second stress-reducing layer on the harder layer comprising a third material having a third thickness, with the third material and the third thickness selected to compensate for stress from depositing of the harder layer;
- removing the carrier substrate from the wafer assembly;
- and
- manipulating the wafer assembly via the metal substrate for further processing.
6 more elements
A method comprising:
- providing a wafer assembly comprising a plurality of semiconductor dies on a carrier substrate, each die comprising a multi-layer epitaxial structure having a thermal expansion coefficient;
- depositing a plurality of metal layers on the semiconductor dies configured as a metal substrate, the metal layers comprising:
- an initial layer on the epitaxial structure comprising a first metal having a first thickness and a first thermal expansion coefficient substantially matching the thermal expansion coefficient of the epitaxial structure and a first thermal conductivity, with the first metal and the first thickness selected to allow handling of the wafer assembly without cracking of the epitaxial structure;
- a thermally conductive layer deposited on the initial layer comprising a second metal having a second thickness and a second thermal conductivity greater than the first thermal conductivity;
- removing the carrier substrate from the wafer assembly;
- and
- manipulating the wafer assembly via the metal substrate for further processing.
4 more elements
Dependencies are inferred from the claim text.