Backside surface treatment of semiconductor chips
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu Lai, Cheng-Ta Wu, Kai-Chun Hsu, Yeur-Luen Tu, Ching-Chun Wang, Chia-Shiung Tsai
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Abstract
A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.
Claims20
A method comprising:
- performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface;
- and
- performing a treatment on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment, with an image sensor being located on a front side of the semiconductor substrate at a time the grinding is performed, wherein process gases used in the treatment comprise oxygen (O2), and wherein the plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.
A method comprising:
- performing a grinding on a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate comprises a back surface, and wherein an image sensor is disposed on a front side of the semiconductor substrate;
- implanting a p-type impurity into a top surface layer of the backside of a remaining portion of the semiconductor substrate to form a p-type layer, wherein a lower portion of the semiconductor substrate below the top surface layer is not implanted;
- and
- performing a dry treatment on the p-type layer, wherein process gases used in the dry treatment comprise oxygen, and wherein substantially no hydrogen (H2) is used in the dry treatment.
A method comprising:
- performing a grinding on a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate comprises a back surface, and wherein an image sensor is disposed on a front side of the semiconductor substrate;
- implanting a p-type impurity into a top surface layer of the backside of a remaining portion of the semiconductor substrate to form a p-type layer;
- and
- performing a plasma treatment on the p-type layer, wherein during the plasma treatment, substantially no vertical bias is applied in a direction perpendicular to a top surface of the p-type layer, and wherein the plasma treatment is performed in process gases comprising oxygen (O2).
Dependencies are inferred from the claim text.