Phase change random access memory and method for manufacturing the same
AssigneeSK hynix Inc.
InventorKeun Lee
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Abstract
A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.
Claims13
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using at least one of a first element, a second element, and a third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using the first element.
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using any one of a binary compound of a first element and a second element, a binary compound of the first element and a third element, and a binary compound of the second element and the third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using a binary compound of the first element and the second element or a binary compound of the first element and the third element.
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using a ternary compound of a first element, a second element and a third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using a ternary compound of the first element, the second element and the third element.
Dependencies are inferred from the claim text.