Magnetic tunnel junction device fabrication
AssigneeQUALCOMM Incorporated
InventorsXia Li, Seung H. Kang
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Abstract
In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming an MTJ cap layer on an MTJ structure and forming a top electrode layer coupled to the MTJ cap layer. The top electrode layer includes at least two layers and one layer of the two layers includes a nitrified metal.
Claims35
A method of forming a magnetic tunnel junction (MTJ) device, the method comprising:
- forming an MTJ cap layer on an MTJ structure;
- and
- forming a top electrode layer coupled to the MTJ cap layer,
- wherein the top electrode layer comprises at least two layers, and
- wherein one layer of the at least two layers comprises a first nitrified metal.
A method of forming a magnetic tunnel junction (MTJ) device, the method comprising:
- forming an MTJ cap layer on an MTJ structure, wherein the MTJ cap layer comprises at least two layers, and wherein one layer of the at least two layers comprises titanium nitride (TiN);
- and
- forming an electrode layer coupled to the MTJ cap laver, wherein the electrode layer comprises at least two layers, and wherein one layer of the at least two layers of the electrode layer comprises a nitrified metal.
A method of forming a magnetic tunnel junction (MTJ) device, the method comprising:
- a first step for forming an MTJ cap layer on an MTJ structure;
- and
- a second step for forming a top electrode layer over the MTJ cap layer,
- wherein the top electrode layer comprises at least two layers, and
- wherein one layer of the at least two layers comprises a first nitrified metal.
A computer readable medium storing instructions that, when executed, cause a processor to:
- initiate formation of an MTJ cap layer on an MTJ structure;
- and
- initiate formation of a top electrode layer coupled to the MTJ cap layer, wherein the top electrode layer comprises at least two layers, and wherein one layer of the at least two layers comprises a first nitrified metal.
A method comprising:
- receiving design information representing at least one physical property of a semiconductor device, the semiconductor device comprising:
- an MTJ structure;
- an MTJ cap layer coupled to the MTJ structure;
- and
- a top electrode layer coupled to the MTJ cap layer, wherein the top electrode layer comprises at least two layers, and wherein one layer of the at least two layers comprises a first nitrified metal;
- transforming the design information to comply with a file format;
- and
- generating a data file including the transformed design information.
A method comprising:
- receiving a data file comprising design information corresponding to a semiconductor device;
- and
- fabricating the semiconductor device according to the design information, wherein the semiconductor device comprises:
- an MTJ structure;
- an MTJ cap layer coupled to the MTJ structure;
- and
- a top electrode layer coupled to the MTJ cap layer, wherein the top electrode layer comprises at least two layers, wherein the top electrode layer comprises a nitrified metal.
A method comprising:
- receiving a data file comprising design information comprising physical positioning information of a packaged semiconductor device on a circuit board;
- and
- manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device comprises:
- an MTJ structure;
- an MTJ cap layer coupled to the MTJ structure;
- and
- a top electrode layer coupled to the MTJ cap layer, wherein the top electrode layer comprises at least two layers, and wherein one layer of the at least two layers comprises a first nitrified metal.
Dependencies are inferred from the claim text.