Back to results
US 8,802,354 B2Granted
Water mark defect prevention for immersion lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu Chang
Life of this patent
Estimating the term…
Abstract
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
Claims19
A material for use in immersion lithography, the material comprising:
- a polymer that turns soluble to a base solution in response to reaction with acid;
- a photo-acid generator (PAG) that decomposes to form an acid in response to a radiation energy;
- and
- a quencher capable of neutralizing acid and having a reduced mobility, wherein the quencher includes a structure selected from the group consisting of 1) at least two ring structures, 2) at least one carbon chain structure having at least four carbon atoms, and 3) one ring structure and two long chain structures, each long chain structure having at least two carbon atoms, and
- wherein the quencher is chemically bonded to the polymer.
2 more elements
A material for use in immersion lithography, comprising:
- a polymer that turns soluble to a base solution in response to reaction with acid;
- a photo-acid generator (PAG) that decomposes to form an acid in response to a radiation energy;
- and
- a quencher capable of neutralizing acid and having a reduced mobility, wherein the quencher includes a structure selected from the group consisting of 1) two ring structures and an alkyl group;
- 2) three ring structures;
- 3) one alkyl group and two ring structures;
- 4) two alkyl groups and a long chain, the long chain having at least two carbon atoms;
- 5) two alkyl groups and a long chain, the long chain having an oxygen atom and at least two carbon atoms;
- 6) one ring structure having an oxygen atom and two long chain structures, each long chain structure having at least two carbon atoms;
- 7) two alkyl groups and one branched structure having two short chains, each short chain having one carbon atom;
- 8) two alkyl groups and one branched structure having two long chains, each long chain having at least two carbon atoms;
- and 9) two alkyl groups and one branched structure having three short chains, each short chain having one carbon atom, and
- wherein the quencher is chemically bonded to the polymer.
10 more elements
A method comprising:
- forming a photo sensitive layer over a wafer, the photo sensitive layer including a quencher chemically bonded to a polymer, wherein the quencher includes a structure selected from the group consisting of 1) two ring structures and an alkyl group;
- 2) three ring structures;
- 3) one alkyl group and two ring structures;
- 4) two alkyl groups and a long chain, the long chain having at least two carbon atoms;
- 5) two alkyl groups and a long chain, the long chain having an oxygen atom and at least two carbon atoms;
- 6) one ring structure having an oxygen atom and two long chain structures, each long chain structure having at least two carbon atoms;
- 7) two alkyl groups and one branched structure having two short chains, each short chain having one carbon atom;
- 8) two alkyl groups and one branched structure having two long chains, each long chain having at least two carbon atoms;
- and 9) two alkyl groups and one branched structure having three short chains, each short chain having one carbon atom;
- immersing the photo sensitive layer in an immersion fluid;
- and
- exposing the photo sensitive layer to a radiation energy.
9 more elements
Dependencies are inferred from the claim text.