Compound for resist and radiation-sensitive composition specification

A method of forming resist patterns, which comprises the steps of:

• coating a radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent, wherein the radiation sensitive composition contains a compound B which satisfies the following requirements of:
• (a) having a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di-to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and
• (b) having a molecular weight of 400 to 2000, and wherein a total content of the compound B and a solubilizer C is 50 to 99.999% by weight of a total weight of the solid component on a substrate,
• heating the coated composition before exposure to form a resist film;
• exposing the resist film to KrF excimer lasers, extreme ultraviolet rays, electron beams or X-rays in a desired pattern;
• optionally heating the exposed resist film;
• and
• alkali-developing the exposed resist film;
• wherein the compound B is represented by the following formula I:
• wherein each R1 is an acid-dissociating group selected from the group consisting of substituted methyl groups, 1-substituted ethyl groups, 1-substituted n-propyl groups, 1-branched alkyl groups, silyl groups, acyl groups, 1-substituted alkoxymethyl groups, cyclic ether groups and alkoxycarbonyl groups, and two or more R1 may be the same or different;
• wherein each R2A is a group selected from the group consisting of halogen atom, alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group, aryloxy group, alkenyl group, acyl group, alkoxycarbonyl group, alkyloyloxy group, aryloyloxy group, cyano group, and nitro group, and two or more R2A may be the same or different;
• wherein each of R3 and R7 is a hydrogen atom or alkyl group having 1 to 6 carbon atoms;
• wherein R4A is a divalent group having 10 to 28 carbon atoms which includes a biphenyl structure, terphenyl structure, naphthalene structure, phenanthrene structure, or pyrene structure, or R4A together with R3 and R7 optionally represents a tetravalent group having 10 to 28 carbon atoms which includes a fluorine structure or benzophenone structure;
• and
• wherein each of k0, j0, m0, and n0 is an integer of 0 to 3, each of k1, j1, m1, and n1 is an integer of 0 to 3;
• and each of k2, j2, m2, and n2 is an integer of 0 to 4, satisfying 1≦k0+k1+k2≦5, 1<j0+j1+j2<5, 1<m0+m1+m2<5, 1<n0+n1+n2<5, 1<k1+j1+m1+n1<12, 1<k0+k1<3, 1<j0+j1<3, 1<m0+m1<3, and 1<n0+n1<3.