Silicon containing coating compositions and methods of use
AssigneeInternational Business Machines Corporation
InventorsRobert D. Allen, Phillip J. Brock, Kuang-Jung Chen, Alexander Friz, Wu-Song Huang, Ratnam Sooriyakumaran, Sally A. Swanson, Hoa D. Truong
Life of this patent
Estimating the term…
Abstract
Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
Claims20
A coating composition, comprising:
- a polymer comprising
- wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality;
- X1, X2, X3 are independently H or CH3;
- and m and o are non-zero positive integers and n is a positive integer representing the number of repeat units, wherein the silicon containing moiety is derived from a monomer selected from the group consisting of:
- a photoacid generator;
- and
- a solvent.
A method of forming an image in a photoresist layer, comprising:
- forming a photoresist layer on a substrate, wherein the photoresist layer comprises a polymer comprising:
- wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality;
- X1, X2, X3 are independently H or CH3;
- and m and o are non-zero positive integers and n is a positive integer representing the number of repeat units, and wherein the silicon containing moiety is derived from a monomer selected from the group consisting of:
- and mixtures thereof;
- a photoacid generator;
- and a solvent;
- exposing the photoresist layer to radiation through a photomask, wherein the radiation changes the chemical composition of regions of the photoresist layer exposed to the radiation, thereby forming exposed and unexposed regions in the photoresist layer;
- and
- optionally baking the exposed photoresist layer to promote acid-catalyzed reaction in exposed portions of the photoresist layer;
- developing the photoresist layer to form a relief pattern;
- and
- transferring the pattern to the substrate.
A coating composition, comprising:
- a polymer is selected from the group consisting of:
- wherein x and z are non-zero integers, y is an integer, and y+z/x+y+z>=0.6
- a photoacid generator;
- and
- a solvent.
Dependencies are inferred from the claim text.