Reflective lithography masks and systems and methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hsuan Liu, Jen-Pan Wang
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Abstract
Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
Claims22
A method for lithography, the method comprising:
- projecting first radiation from a first radiation source;
- reflecting a first pattern of the first radiation off of a first curved reflective surface of a first lithography mask, the first curved reflective surface having a single focal point, the first lithography mask comprising a first reticle pattern, the first pattern of the first radiation corresponding with the first reticle pattern;
- and
- impinging the first pattern of the first radiation on an area of a substrate.
A method comprising:
- directing first optical radiation towards a first lithography mask, the first lithography mask comprising a first curved reflective surface with a first reticle pattern;
- reflecting a first portion of the first optical radiation corresponding at least in part to the first reticle pattern off of the first curved reflective surface, the first portion of the first optical radiation forming a first reflected pattern;
- and
- exposing a substrate to the first reflected pattern.
A method for lithography, the method comprising:
- directing optical energy from an optical energy source towards a lithography mask, the lithography mask having a reticle pattern;
- reflecting an optical pattern off of the lithography mask, the optical pattern corresponding to the reticle pattern, the optical pattern as reflected without use of a lens having a dimension smaller than a corresponding dimension of the reticle pattern;
- and
- impinging the optical pattern on an area of a substrate.
Dependencies are inferred from the claim text.