Back to results
US 8,802,201 B2Granted
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
AssigneeASM America, Inc.
InventorsPetri Raisanen, Jung Sung-hoon, Verghese Mohith
Life of this patent
Estimating the term…
Abstract
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
Claims19
A method for depositing stacked layers on a substrate within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
- exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas;
- forming active NxOy species;
- introducing the active NxOy species to a reaction chamber;
- exposing the substrate to an oxidizer gas comprising an oxidant gas and the active NxOy species for an oxidation pulse interval;
- and
- prior to introducing the active NxOy species to the reaction chamber, monitoring the active NxOy species and adjusting one or more process parameters based on the monitoring.
3 more elements
A method of manufacturing a semiconductor comprising:
- disposing a dielectric layer upon a substrate;
- forming an inter oxide layer between said dielectric layer and substrate by exposing said substrate to a combination of a gas comprising ozone generated from a mixture of O2 and N2 having a N2/O2 ratio of less than one percent and an excited nitrogen-containing species gas, said combination introduced to a reaction chamber;
- and
- prior to introducing the combination to the reaction chamber, monitoring active NxOy species and adjusting one or more process parameters based on the monitoring.
1 more element
Dependencies are inferred from the claim text.