Tellurium precursors for film deposition
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsHana Ishii, Julien Gatineau
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Abstract
Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Claims20
A method of forming a tellurium-containing film on a substrate, comprising:
- a) providing a reactor and at least one substrate disposed therein;
- b) introducing a tellurium-containing precursor into the reactor, wherein the tellurium-containing precursor is selected from the group consisting of (Me3Ge)2Te, (Et3Ge)2Te, (iPr3Ge)2Te, (tBu3Ge)2Te, (Me2tBuGe)2Te, ((Me3Si)3Ge)2Te, (Me3Ge)Te(Si(SiMe3)3), and ((Me3Si)3Ge)2Te;
- c) Maintaining the reactor at a temperature ranging from approximately 20° C. to approximately 100° C.;
- and
- d) Depositing at least part of the tellurium-containing precursor onto the substrate to form a tellurium-containing film by a vapor deposition method.
A method of forming a GST film on a substrate, the method comprising introducing into an ALD reactor containing a substrate sequential pulses of a Sb-containing precursor, a Ge-containing precursor, and a Te-containing precursor, each ALD cycle comprising one pulse of the Sb-containing precursor and the Ge-containing precursor and at least two pulses of the Te containing precursor, wherein the Te-containing precursor is selected from the group consisting of (Me3Ge)2Te, (Et3Ge)2Te, (iPr3Ge)2Te, (tBu3Ge)2Te, (Me2tBuGe)2Te, ((Me3Si)3Ge)2Te, (Me3Ge)Te(Si(SiMe3)3), and ((Me3Si)3Ge)2Te.
Dependencies are inferred from the claim text.