Back to results
US 8,801,279 B2Granted
Semiconductor device with stacked structure having through electrode, semiconductor memory device, semiconductor memory system, and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-sik Kim, Dong-hyuk Lee, Ho-cheol Lee, Jang-woo Ryu
Life of this patent
Estimating the term…
Abstract
A semiconductor device, memory device, system, and method of using a stacked structure for stably transmitting signals among a plurality of semiconductor layers is disclosed. The device includes at least a first semiconductor chip including a first temperature sensor circuit configured to output first temperature information related to the first semiconductor chip, and at least one through substrate via.
Claims8
A semiconductor device for a semiconductor package, the semiconductor device comprising:
- at least a first semiconductor chip including a first temperature sensor circuit configured to output first temperature information related to the first semiconductor chip;
- a first bump electrically connected to the first temperature sensor circuit without being electrically connected to a through substrate via;
- and
- a second bump electrically connected to a through substrate via of the first semiconductor chip.
1 more element
A semiconductor package, comprising:
- a package substrate;
- and
- a first semiconductor chip on the package substrate, the first semiconductor chip including a plurality of through substrate vias for transmitting signals to the package substrate,
- wherein the first semiconductor chip includes a first temperature sensor circuit electrically coupled to the package substrate, and
- the first semiconductor chip is configured to transmit temperature information from the first temperature sensor circuit to the package substrate without using a through substrate via.
2 more elements
Dependencies are inferred from the claim text.