Methods for modeling of FinFET width quantization

A method for modeling fin field effect transistor (FinFET) width quantization, the method being performed at least in part by execution of computer program instructions by at least one computer, comprising:

• fitting by using a data processor points of a curve representing a FinFET model of a FinFET device to points of a curve representing single fin current and voltage characteristics, where the FinFET device comprises a plurality of fins;
• obtaining statistical data of sample FinFET devices, where the statistical data comprises drain induced barrier lowering (DIBL) data and subthreshold slope data;
• and
• fitting the FinFET model to a variation in a current to turn off the FinFET devices (Ioff) in the statistical data using the DIBL data and the subthreshold slope data.
• where fitting the FinFET model comprises determining a model for a FinFET devices turn-off voltage parameter, VOFF, where the VOFF parameter changes subthreshold behavior but not on-state behavior, and
• where the model for the turn-off parameter satisfies the equation:
• V
• OFF
• =
• A
• -
• B
• ⁢
• ⁢
• 1
• N
• fin
• +
• B
• ⁢
• ⁢
• 2
• N
• fin
• ,
• where A, B1 and B2 are constants, and Nfin is a number of individual fins in the FinFET device.

An apparatus comprising at least one data processor configured to perform operations comprising:

• to fit points of a curve representing a FinFET model of a FinFET device to points of a curve representing single fin current and voltage characteristics, where the FinFET device comprises a plurality of fins;
• to obtain statistical data of sample FinFET devices, where the statistical data comprises drain induced barrier lowering (DIBL) data and subthreshold slope data;
• and
• to fit the FinFET model to a variation in a current to turn off the FinFET devices (Ioff) in the statistical data using the DIBL data and the subthreshold slope data, where the FinFET model is fit to the variation in current by determining a model for a FinFET devices turn-off voltage parameter, VOFF, where the VOFF parameter changes subthreshold behavior but not on-state behavior.

An apparatus comprising at least one data processor configured to perform operations comprising:

• to fit points of a curve representing a FinFET model of a FinFET device to points of a curve representing single fin current and voltage characteristics, where the FinFET device comprises a plurality of fins;
• to obtain statistical data of sample FinFET devices, where the statistical data comprises drain induced barrier lowering (DIBL) data and subthreshold slope data;
• and
• to fit the FinFET model to a variation in a current to turn off the FinFET devices (Ioff) in the statistical data using the DIBL data and the subthreshold slope data, where the FinFET model is fit to the variation in current by determining a model for a FinFET devices turn-off voltage parameter, VOFF, where the VOFF parameter changes subthreshold behavior but not on-state behavior;
• and
• where the model for the turn-off parameter satisfies the equation:
• V
• OFF
• =
• A
• +
• B
• ⁢
• ⁢
• 1
• N
• fin
• +
• B
• ⁢
• ⁢
• 2
• N
• fin
• ,
• where A, B1 and B2 are constants, and Nfin is a number of individual fins in the FinFET device.