Methods for designing fin-based field effect transistors (FinFETS)
AssigneeQUALCOMM Incorporated
InventorsStanley Seungchul Song, Zhongze Wang, Choh fei Yeap
Life of this patent
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Abstract
Methods for designing fin-based field effect transistors (FinFETs) are disclosed. In one embodiment, an initial FinFET design is evaluated to ascertain the space between fins (i.e., the “fin pitch”). Additionally, the spacing between interconnect metal modules (i.e., the “metal pitch”) is ascertained. A ratio of metal pitch to fin pitch is established. From this initial ratio, isotropically scaled sizes are considered along with anisotropically scaled sizes. The variously scaled sizes are compared to design criteria to see what new size best fits the design criteria.
Claims19
A method of designing a fin-based field effect transistor (FinFET), comprising:
- determining a starting point ratio between a metal pitch and a fin pitch for a starting FinFET design;
- evaluating, using a computing device, an isotropically scaled ratio for a smaller FinFET design, the isotropically scaled ratio having at least a first design characteristic;
- evaluating, using the computing device, at least one anisotropically scaled ratio for the smaller FinFET design, the at least one anisotropically scaled ratio having at least a second design characteristic;
- comparing, using the computing device, the first and second design characteristics to at least one threshold design characteristic;
- and
- selecting a new ratio for the FinFET based on the comparing.
A method of designing a fin-based field effect transistor (FinFET), comprising:
- a step for determining a starting point ratio between a metal pitch and a fin pitch for a starting FinFET design;
- a step for evaluating, using software on a non-transitory computer readable medium, an isotropically scaled ratio for a smaller FinFET design, the isotropically scaled ratio having at least a first design characteristic;
- a step for evaluating, using the software on the non-transitory computer readable medium, at least one anisotropically scaled ratio for the smaller FinFET design, the at least one anisotropically scaled ratio having at least a second design characteristic;
- a step for comparing, using the software on the non-transitory computer readable medium, the first and second design characteristics to at least one threshold design characteristic;
- and
- a step for selecting a new ratio for the FinFET based on the comparing.
A non-transitory computer-readable medium having stored thereon computer executable instructions to cause a processor to:
- determine a starting point ratio between a metal pitch and a fin pitch for a starting fin-based field effect transistor (FinFET) design;
- evaluate an isotropically scaled ratio for a smaller FinFET design, the isotropically scaled ratio having at least a first design characteristic;
- evaluate at least one anisotropically scaled ratio for the smaller FinFET design, the at least one anisotropically scaled ratio having at least a second design characteristic;
- compare the first and second design characteristics to at least a threshold design characteristic;
- and
- select a new ratio for the FinFET based on the comparing.
Dependencies are inferred from the claim text.