Optical system with integrated photodetector using a self-aligned double U-groove structure
AssigneeLaxense Inc.
InventorsNingning Feng, Xiaochen Sun, Dawei Zheng
Life of this patent
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Abstract
An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.
Claims26
An optical system comprising:
- a silicon substrate in a <100> crystal orientation, having a horizontal first surface formed by a <100> crystalline plane;
- a reflecting surface formed by a <110> or <111> crystalline plane of the silicon substrate near the first surface, and
- a double trench structure formed in the silicon substrate for receiving an end portion of an optical fiber, including a first trench located below the first surface of the silicon substrate and a second trench located below a bottom surface of the first trench, the double trench structure extending horizontally along a longitudinal line with a first end located near the reflecting surface, a vertical plane passing through the longitudinal line being perpendicular to the reflecting surface.
A method of coupling a light source to an optical fiber, comprising:
- (a) providing a silicon substrate in a <100> crystal orientation having a horizontal first surface formed by a <100> crystalline plane;
- (b) forming a reflecting surface by a <110> or <111> crystalline plane of the silicon substrate near the first surface of the silicon substrate;
- and
- (c) forming a double trench structure in the silicon substrate for receiving an end portion of the optical fiber, including a first trench located below the first surface of the silicon substrate and a second trench located below a bottom surface of the first trench, the double trench structure extending horizontally along a longitudinal line with a first end located near the reflecting surface, a vertical plane passing through the longitudinal line being perpendicular to the reflecting surface.
Dependencies are inferred from the claim text.