High speed lasing device
AssigneeTyco Electronics Svenska Holdings AB
InventorNicolae Pantazi Chitica
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Abstract
The present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region. The second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region. The second reflector region and the first reflector are configured to induce stimulated recombination in the auxiliary active region.
Claims13
A lasing device for use in an optical interconnect, the lasing device comprising:
- a first reflector and a second reflector;
- a confinement layer, said confinement layer being adapted to confine current within a current-confining aperture;
- an active layer between the first and second reflectors, said active layer comprising a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region and overlapping the periphery of the main active region, the auxiliary active region being a zone of the active layer including carriers that leaked from the main active region;
- wherein the confinement layer is between the active layer and the second reflector and wherein the second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region, the first reflector region, the main active region and the first reflector defining a main laser;
- wherein the second reflector region, the auxiliary active region and the first reflector define an auxiliary laser;
- and
- wherein the second reflector region and the first reflector, are configured to induce stimulated recombination in the auxiliary active region so that a carrier density is clamped within the auxiliary active region and additional stimulated recombination is induced at the periphery of the main active region, wherein a reflectance of second reflector region is higher than a reflectance of the first reflector region.
A method for forming a lasing device for use in an optical interconnect, the method including:
- forming a first reflector on a semiconductor substrate;
- forming a confinement layer, said confinement layer being adapted to confine current within a current-confining aperture,
- forming an active layer aligned with the current confining aperture and an auxiliary active region surrounding the main active region;
- forming a second reflector above the active layer and above the confinement layer;
- the second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region, wherein a reflectance of second reflector region is higher than a reflectance of the first reflector region;
- defining a main laser from the first reflector region, the main active region and the first reflector;
- defining an auxiliary laser from the second reflector region, the auxiliary active region and the first reflector;
- and
- wherein the second reflector region and the first reflector, are configured to induce stimulated recombination in the auxiliary active region so that a carrier density is clamped within the auxiliary active region and additional stimulated recombination is induced at the periphery of the main active region.
Dependencies are inferred from the claim text.