Self-referenced MRAM element with linear sensing signal

A method for reading an MRAM element, comprising:

• a magnetic tunnel junction comprising a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold, a sense layer having a sense magnetization, and a tunnel barrier layer included between the storage layer and the sense layer, the magnetic tunnel junction having a magnetoresistance corresponding to the difference between a high junction resistance value where the sense magnetization is antiparallel to the storage magnetization and a low junction resistance value where the sense magnetization is parallel to the storage magnetization;
• an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction;
• and
• a first field line for providing a first read magnetic field;
• the method comprising:
• adjusting the sense magnetization in a first read direction;
• measuring a first junction resistance value;
• adjusting the sense magnetization in a second read direction;
• and
• measuring a second junction resistance value;
• wherein said adjusting the sense magnetization is performed about the second direction within a range being at least about 20% of the magnetoresistance;
• and wherein
• the junction resistance varies linearly within said range.