Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

An apparatus comprising:

• means for storing a data value, the means for storing comprising a first magnetic tunnel junction (MTJ) and a second MTJ;
• and
• means for generating a non-reversible state at the means for storing by applying a program voltage to the first MTJ without applying the program voltage to the second MTJ, wherein the non-reversible state corresponds to a value of the means for storing that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.

A computer readable tangible medium storing instructions executable by a processor to:

• generate a non-reversible state at a bitcell by applying a program voltage to a first magnetic tunnel junction (MTJ) of the bitcell without applying the program voltage to a second MTJ of the bitcell, wherein the non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.