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US 8,797,784 B2Granted
Filamentary memory devices and methods
AssigneeMicron Technology, Inc.
InventorsLei Bi, Beth R. Cook, Marko Milojevic, Durai Vishak Nirmal Ramaswamy
Life of this patent
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Abstract
Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.
Claims25
A memory cell, comprising:
- a reversible filament region located between a pair of electrodes, the reversible filament region including an insulator forming an interface with an oxygen source material;
- and
- a resistor material located between the reversible filament region and at least one of the pair of electrodes.
An apparatus, comprising:
- a reversible filament region located between a pair of electrodes, the reversible filament region including an insulator forming an interface with an oxygen source material;
- and
- a carbon region located between the insulator and at least one of the pair of electrodes.
A method, comprising:
- forming a carbon region between a first electrode and a reversible filament region in a memory cell;
- modifying the carbon region to provide a resistance across the carbon region of between approximately 0.9 and 1.1 Ω-cm;
- and
- coupling a second electrode opposite the first electrode, with the carbon region and the reversible filament region therebetween.
1 more element
A method of operating a memory device, comprising:
- providing a voltage across a pair of electrodes to form a conducting filament through an insulator in a reversible filament region located between the pair of electrodes;
- controlling current through the reversible filament region using a resistor region;
- and
- providing a reverse bias to the pair of electrodes to remove the conducting filament, wherein a resistance across the reversible filament region after removal of the conducting filament is greater than or equal to a resistance across the reversible filament region before forming the conducting filament.
1 more element
Dependencies are inferred from the claim text.