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US 8,797,104 B2Granted
Amplifier with floating well
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsieh-Hung Hsieh, Yi-Hsuan Liu, Chiao-Han Lee, Tzu-Jin Yeh, Chewn-Pu Jou
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Abstract
A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.
Claims20
A low-noise amplifier, comprising:
- a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground;
- and
- a second transistor having a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node,
- wherein the first transistor includes a floating deep n-well that is coupled to an isolation circuit, and the source of the first transistor is coupled to ground through a source degeneration circuit.
1 more element
A low-noise amplifier, comprising:
- a first stage including
- a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground, and
- a second transistor having a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node of the first stage;
- and
- a second stage including
- a third transistor having a gate coupled to the output node of the first stage and a source coupled to ground, and
- a fourth transistor having a source coupled to a drain of the third transistor, a gate coupled to a bias voltage, and a drain coupled to an output node,
- wherein at least one of the first, second, third, and fourth transistors includes a floating deep n-well that is coupled to an isolation circuit.
5 more elements
A method, comprising:
- receiving an oscillating input signal at a gate of a common-source transistor of a low-noise amplifier;
- permitting a deep n-well to float, wherein the deep n-well is isolated from a body of at least one of the common-source transistor or a body of a common-gate transistor having a source coupled to the drain of the common-source transistor;
- and
- outputting an amplified signal from an output node of the low-noise amplifier,
- wherein the common-source transistor includes the deep n-well, and the source of the common-source transistor is coupled to ground through a source degeneration circuit.
2 more elements
Dependencies are inferred from the claim text.