Circuit unit, bias circuit with circuit unit and differential amplifier circuit with first and second circuit unit
AssigneeEpcos AG
InventorsBart Balm, Jeroen Bouwman, Léon C. M. van den Oever
Life of this patent
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Abstract
Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor.
Claims12
Bias circuit with a circuit unit, the circuit unit comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor, wherein either a source or a drain of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector or emitter of the heterojunction bipolar transistor, with the heterojunction bipolar transistor of the circuit unit being a sixth control element and with the long-gate pseudomorphic high-electron-mobility transistor of the circuit unit being a seventh control element, and with a fifth control element comprising another heterojunction bipolar transistor, whereas a base and the collector of the sixth control element are electrically shorted and a base of the fifth control element is electrically coupled to the base of the sixth control element.
Differential amplifier circuit comprising
- a first circuit unit including a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor, wherein either a source or a drain of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector or emitter of the heterojunction bipolar transistor, with the heterojunction bipolar transistor being a first control element and with its long-gate pseudomorphic high-electron-mobility transistor being a second control element,
- a second circuit unit including a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor, wherein either a source or a drain of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector or emitter of the heterojunction bipolar transistor, with the heterojunction bipolar transistor being a third control element and with its long-gate pseudomorphic high-electron-mobility transistor being a fourth control element, whereas the first control element and the third control element are electrically coupled via a connection point and the second control element and the fourth control element are electrically coupled via a further connection point,
- a current sink being electrically arranged between a reference potential and the connection point and being operable to demand a predetermined current through the first circuit unit and/or the second circuit unit.
Dependencies are inferred from the claim text.