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US 8,796,927 B2Granted
Plasma cell and method of manufacturing a plasma cell
AssigneeInfineon Technologies AG
InventorDirk Meinhold
Life of this patent
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Abstract
A plasma cell and a method for making a plasma cell are disclosed. In accordance with an embodiment of the present invention, a cell comprises a semiconductor material, an opening disposed in the semiconductor material, a dielectric layer lining a surface of the opening, a cap layer closing the opening, a first electrode disposed adjacent the opening, and a second electrode disposed adjacent the opening.
Claims26
A cell comprising:
- a semiconductor material;
- an opening disposed in the semiconductor material;
- a dielectric layer lining a surface of the opening;
- a cap layer closing the opening;
- a first electrode disposed adjacent the opening;
- and
- a second electrode disposed adjacent the opening, wherein the surface of the opening comprises a first sidewall, a second sidewall and a bottom surface, and wherein the first electrode is disposed at the first sidewall and the second electrode is disposed at the second sidewall.
4 more elements
A panel comprising:
- a semiconductor material;
- and
- a plurality of cells, each cell comprising:
- an opening disposed in the semiconductor material, wherein the opening comprises a U-shaped trench;
- a dielectric layer lining a surface of the opening;
- a cap layer sealing the opening;
- a first electrode disposed adjacent the opening;
- and
- a second electrode disposed adjacent the opening.
6 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming an opening in a semiconductor material;
- lining the opening with a dielectric layer;
- closing the opening with a cap layer, wherein closing the opening comprises:
- filling the opening with a sacrificial material;
- forming the cap layer over the sacrificial material;
- forming a hole in the cap layer;
- and
- removing the sacrificial material through the hole;
- forming a first electrode adjacent the opening;
- and
- forming a second electrode adjacent the opening.
8 more elements
A cell comprising:
- a semiconductor material;
- an opening disposed in the semiconductor material, wherein the opening comprises a U-shaped trench;
- a dielectric layer lining a surface of the opening;
- a cap layer closing the opening;
- a first electrode disposed adjacent the opening;
- and
- a second electrode disposed adjacent the opening.
4 more elements
A cell comprising:
- a semiconductor material;
- an opening disposed in the semiconductor material;
- a dielectric layer lining a surface of the opening;
- a cap layer closing the opening;
- a first electrode disposed adjacent the opening;
- and
- a second electrode disposed adjacent the opening, wherein the opening comprises a first trench having first sidewalls and a second trench having second sidewalls, wherein the first trench is connected to the second trench, wherein the first electrode is disposed over a top surface of the first trench and the second electrode is disposed over a second top surface of the second trench, and wherein an isolation region is disposed between the first trench and the second trench.
4 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming an opening in a semiconductor material;
- lining the opening with a dielectric layer;
- closing the opening with a cap layer;
- forming a first electrode adjacent the opening;
- and
- forming a second electrode adjacent the opening, wherein forming the first electrode and/or forming the second electrode comprises doping the semiconductor material.
3 more elements
Dependencies are inferred from the claim text.