Photocathode
AssigneeHamamatsu Photonics K.K.
InventorsToshikazu Matsui, Yasumasa Hamana, Kimitsugu Nakamura, Yoshihiro Ishigami, Daijiro Oguri
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Abstract
The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.
Claims23
A photocathode comprising:
- a photoelectron emission layer, adapted to emit a photoelectron to outside in response to light incident thereon, containing Sb and Bi;
- a transmissive substrate formed on a light entrance side of the photoelectron emission layer;
- and
- an underlayer formed from MgO that is formed between the substrate and the photoelectron emission layer, on a light entrance side of the photoelectron emission layer,
- wherein the underlayer is formed on. the substrate or the underlayer is formed by the intermediary of an intermediate layer formed from HfO2 on the substrate,
- the photoelectron emission layer is formed to be in direct contact with the underlayer, and
- the photoelectron emission layer contains 0.4 mol % or more and 16.7 mol % or less of Bi relative to the Sb and Bi.
A photocathode comprising:
- a photoelectron emission layer, adapted to emit a photoelectron to outside in response to light incident thereon, containing Sb and Bi;
- a transmissive substrate formed on a light entrance side of the photoelectron emission layer;
- and
- an underlayer formed from MgO that is formed between the substrate and the photoelectron emission layer, on a light entrance side of the photoelectron emission layer,
- wherein the underlayer is formed on the substrate or the underlayer is formed by the intermediary of an intermediate layer formed from HfO2 on the substrate,
- the photoelectron emission layer is formed to be in direct contact with the underlayer, and
- the photoelectron emission layer contains 6,9 mol % or more and 32 mol % or less of Bi relative to the Sb and Bi.
A light detection device comprising:
- a photoelectron emission layer, adapted to emit a photoelectron to outside in response to light incident thereon, containing Sb and Bi;
- a transmissive substrate formed on a light entrance side of the photoelectron emission layer;
- and
- an underlayer formed from MgO that is formed between the substrate and the photoelectron emission layer, on a light entrance side of the photoelectron emission layer,
- wherein the underlayer is formed on the substrate or the underlayer is formed by the intermediary of an intermediate layer formed from HfO2 on the substrate,
- the photoelectron emission layer is formed to be in direct contact with the underlayer, and
- the photocathode is used in a light detection device using a liquid argon scintillator or liquid xenon scintillator.
Dependencies are inferred from the claim text.