Semiconductor device and manufacturing method thereof
AssigneeLapis Semiconductor Co., Ltd.
InventorTakashi Izumi
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Abstract
A semiconductor device manufacturing method is disclosed. The method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom.
Claims11
A semiconductor device comprising:
- an SOI substrate having a semiconductor substrate layer, a semiconductor layer, and a first insulation film, said semiconductor layer having a semiconductor element and a first electrode pad formed on a surface of the semiconductor layer, and said first insulation film being disposed between the semiconductor substrate layer and the semiconductor layer, the semiconductor substrate layer having a first surface and a second surface opposite the first surface, the first surface being in contact with the first insulation film, the second surface defining an outer surface of the SOI substrate, and the surface of the semiconductor layer defining an opposite outer surface of the SOI substrate;
- a first through via extending through the SOI substrate from the second surface of the semiconductor substrate layer and terminating at the surface of the semiconductor layer, the first electrode pad being on top of one end of the first through via and being electrically connected to the first through via;
- an external terminal provided on the second surface of the semiconductor substrate layer, the external terminal being electrically connected to another end of the first through via, with a second insulation film being disposed between the external terminal and the semiconductor substrate layer;
- a contact part having a conductive film electrically connected to the semiconductor substrate layer at a bottom of a trench, said trench extending from the second surface of the semiconductor substrate layer and terminating in the semiconductor substrate layer;
- a potential fixing electrode provided on the second surface of the semiconductor substrate layer, the potential fixing electrode being electrically connected to the contact part, with the second insulation film being disposed between the potential fixing electrode and the semiconductor substrate layer;
- a second electrode pad on the surface of the semiconductor layer, said first electrode pad being separate from the second electrode pad;
- and
- a second through via extending through the SOI substrate from the second surface of the semiconductor substrate layer, the second through via being electrically connected to the second electrode pad, the second through via being separate from the first through via, the second through via being electrically connected to the potential fixing electrode.
Dependencies are inferred from the claim text.