Back to results
US 8,796,851 B2Granted
Bonding pad and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChiang-Ming Chuang, Chun Che Huang, Shih-Chieh Chang
Life of this patent
Estimating the term…
Abstract
The description relates to a bonding pad for a semiconductor device deposited. The first region comprising aluminum deposited at a high temperature having a large grain size. The second region comprising aluminum deposited at a lower temperature having a smaller grain size.
Claims20
A bonding pad for a semiconductor device comprising:
- a first region over a buffer layer, the first region comprising aluminum and having a first average grain size;
- a second region comprising aluminum and having a second average grain size formed over the first region;
- and
- a first passivation layer surrounding the first region and the second region,
- a second passivation layer partially covering the second region,
- wherein the first average grain size is different than the second average grain size, and
- wherein the first region and the second region extend along a top surface of the first passivation layer.
4 more elements
A bonding pad for a semiconductor device comprising:
- a first region over a buffer layer, the first region comprising aluminum and having a first average grain size of about 2.0 μm to about 4.0 μm;
- a second region comprising aluminum and having a second average grain size of about 0.1 μm to about 2.0 μm;
- and
- a first passivation layer surrounding the first region and the second region;
- and
- a second passivation layer partially covering the second region,
- wherein the first average grain size is at least 1.5 times greater than the second average grain size, and
- wherein the first region and the second region extend along a top surface of the first passivation layer.
5 more elements
A bond pad structure comprising:
- a dielectric layer;
- a conductive layer on the dielectric layer;
- a first passivation layer over the conductive layer, the first passivation layer defining an opening exposing a portion of the conductive layer;
- and
- a bond pad filling at least a portion of the opening and in electrical connection with the conductive layer, the bond pad comprising:
- a first region over a buffer layer, the first region comprising aluminum and having a first average grain size;
- and
- a second region over the first region, the second region comprising aluminum and having a second average grain size;
- a second passivation layer partially covering the second region;
- and
- wherein the first average grain size is different than the second average grain size,
- and
- wherein the first region and the second region extend along a top surface of the first passivation layer.
10 more elements
Dependencies are inferred from the claim text.