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US 8,796,843 B1Granted
RF and milimeter-wave high-power semiconductor device
AssigneeElement Six Technologies US Corporation
InventorsDubravko I. Babic, Quentin E. Diduck, Alex Schreiber
Life of this patent
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Abstract
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
Claims14
An electronic device assembly comprising:
- (a) a substrate having a top surface and a bottom surface, said top surface having an electrical trace, said substrate having an amount of bow defined as the maximum distance from any place on said top surface to a plane defined by the average height of the perimeter of said top surface;
- (b) a wide-gap semiconductor device chip having a contact surface and a back surface, said contact surface of said semiconductor device chip mechanically attached by flip-chip bonding to said top surface of said substrate and said semiconductor device chip electrically coupled to said electrical trace;
- (c) a package housing body in mechanical contact with said top surface of said substrate and not in mechanical contact with said semiconductor device chip, said package body having an electrical terminal electrically coupled to said electrical trace;
- (d) a package cover in thermal contact with said back surface of said semiconductor device chip;
- (e) a package lid;
- (f) at least one metal foil having a thickness disposed between said package body and said package cover, and
- (g) at least one bolt passing through the substrate, packaging housing body and at least one metal foil to the package cover such that the bolt provides firm mechanical contact between the substrate packaging housing body and at least one metal foil and the package cover, wherein said thickness of the at least one foil is selected so said amount of bow is at most 50 micrometers at 23° C.
4 more elements
A semiconductor device package comprising:
- (a) a substrate having a semiconductor device chip attached to its front surface, a metal trace disposed on said front surface, said metal trace electrically coupled to said semiconductor device chip;
- (b) a package body in mechanical contact with said front surface of said substrate and having a terminal electrically coupled to said metal trace;
- and
- (c) a package heatsink in direct thermal contact with said substrate, wherein said heatsink is mechanically fastened to said substrate;
- and wherein said substrate includes a dielectric layer proximal to said front surface of said substrate and a metal cladding distal to said front surface of said substrate, said front surface including an opening in said dielectric layer which exposes said metal cladding and said semiconductor device chip attached to said metal cladding within said opening in said dielectric.
2 more elements
An electronic device assembly comprising:
- (a) a substrate having a top surface and a bottom surface, said top surface having an electrical trace, said substrate having an amount of bow defined as the maximum distance from any place on said top surface to a plane defined by the average height of the perimeter of said top surface;
- (b) a wide-gap semiconductor device chip having a contact surface and a back surface, said contact surface of said semiconductor device chip mechanically attached by flip-chip bonding to said top surface of said substrate and said semiconductor device chip electrically coupled to said electrical trace;
- (c) a package housing body in mechanical contact with said top surface of said substrate and not in mechanical contact with said semiconductor device chip, said package body having an electrical terminal electrically coupled to said electrical trace;
- (d) a package cover in thermal contact with said back surface of said semiconductor device chip;
- (e) a package lid;
- (f) at least one metal foil having a thickness disposed between said package body and said package cover, and
- (g) wherein mechanical contact is provided between the substrate packaging housing body and at least one metal foil and the package cover, and wherein said thickness of the at least one foil is selected so said amount of bow is at most 50 micrometers at 23° C.
4 more elements
Dependencies are inferred from the claim text.