Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYukihiro Satou, Toshiyuki Hata
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Abstract
A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.
Claims14
A semiconductor device, comprising:
- a semiconductor chip having a main surface over which a first electrode pad and a second electrode pad are formed, a first side, and a second side opposite the first side;
- a metal-made support board having a top surface over which the semiconductor chip is disposed;
- a first lead electrically connected to the first electrode pad of the semiconductor chip;
- a first metal conductor electrically connected to the first electrode pad of the semiconductor chip and the first lead;
- and
- a sealing body sealing the semiconductor chip, a part of the first lead, and the first metal conductor,
- wherein the semiconductor chip has a substantially quadrangular shape, the first and second sides of the semiconductor chip extend in a first direction, and the first lead extends in a second direction that intersects the first direction in plan view,
- wherein, in plan view, the second side of the semiconductor chip is closer to the first lead than the first side thereof, and the second electrode pad is disposed at a corner portion of the semiconductor chip that is more proximate to the first side than the second side in plan view and thereby the second electrode pad is located more proximate to the first side than the second side,
- wherein the first metal conductor has a first portion, a second portion, and a third portion,
- wherein the first and second portions of the first metal conductor are electrically bonded to the first electrode pad,
- wherein the third portion of the first metal conductor is disposed between and electrically connected to the first and second portions, and
- wherein a first interspace is formed between the third portion of the first metal conductor and the first electrode pad of the semiconductor chip.
A semiconductor device, comprising:
- a semiconductor chip including a power MOSFET and having a first main surface over which the a source electrode pad and a gate electrode pad are formed, a second main surface over which a drain electrode is formed opposite the first main surface, a first side, and a second side opposite the first side;
- a drain terminal having a top surface over which the semiconductor chip is mounted such that the top surface of the drain terminal faces the second main surface of the semiconductor chip;
- a source lead electrically connected to the source electrode pad of the semiconductor chip via a metal conductor;
- and
- a sealing body sealing the semiconductor chip, a part of the source lead, and the metal conductor,
- wherein the semiconductor chip has a substantially quadrangular shape, the first and second sides of the semiconductor chip extend in a first direction, and the source lead extends in a second direction that intersects the first direction in plan view,
- wherein, in plan view, the second side of the semiconductor chip is closer to the source lead than the first side thereof, and the gate electrode pad is disposed at a corner portion of the semiconductor chip that is more proximate to the first side than the second side in plan view and thereby the gate electrode pad is located more proximate to the first side than the second side,
- wherein the metal conductor has a first portion, a second portion, and a third portion,
- wherein the first and second portions of the metal conductor are electrically bonded to the source electrode pad,
- wherein the third portion of the metal conductor is disposed between and electrically connected to the first and second portions, and
- wherein an interspace is formed between the third portion of the metal conductor and the source electrode pad of the semiconductor chip.
Dependencies are inferred from the claim text.