Wiring device for semiconductor device, composite wiring device for semiconductor device, and resin-sealed semiconductor device

A resin-sealed semiconductor device comprising:

• a wiring device including an insulating layer, a metal substrate, a copper wiring layer and a semiconductor chip support portion, the metal substrate being provided on one side of the insulating layer, the semiconductor chip support portion being provided on the copper wiring layer, the copper wiring layer being provided on another side of the insulating layer and including a first terminal, a second terminal and a wiring portion, the first terminal being connected with an electrode provided on a semiconductor chip, the second terminal being connected with an external wiring device, the wiring portion connecting the first terminal with the second terminal;
• a lead frame electrically connected with the wiring device and mounting the wiring device thereon;
• and
• a semiconductor chip placed above a semiconductor chip support portion of the wiring device and having an electrode, wherein
• the electrode provided on the semiconductor chip is electrically connected with the first terminal by means of a first connection part,
• the second terminal is electrically connected with the lead frame by means of a second connection part,
• the semiconductor chip, the copper wiring layer, a part of the lead frame, the first connection part and the second connection part are resin-sealed by a resin seal member under the condition that the other part of the lead frame is exposed to the outside of the resin seal member,
• the lead frame has a die pad and a lead, the die pad mounting the wiring device thereon, the lead being located on an outer side of the die pad,
• the insulating layer, the metal substrate and the copper wiring layer of the wiring device are mounted on the die pad of the lead frame, and
• the thickness of a central area of the die pad is smaller than that of the lead, the central area mounting the semiconductor chip thereon.