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US 8,796,823 B2Granted
Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus
AssigneeSeiko Epson Corporation
InventorsTsuyoshi Yoda, Kazumi Hara
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Abstract
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
Claims14
A semiconductor device, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other;
- a through hole provided in the semiconductor substrate;
- an insulation film provided along an inner surface of the through hole;
- a metal layer provided along an inner surface of the insulating film in the through hole, a metal layer tip of the metal layer protruding relative to the second surface of the semiconductor substrate;
- a through electrode provided along an inner surface of the metal layer in the through hole, a through electrode tip of the through electrode protruding relative to the second surface of the semiconductor substrate;
- a resin provided along an inner surface of the through electrode in the through hole, the resin being located inside the through electrode, a resin tip of the resin protruding relative to the second surface, wherein
- the through electrode tip is a bump electrode,
- the insulation film and the metal layer are provided between the inner surface of the through hole and the through electrode, and
- the metal layer tip terminates at a location between the through electrode tip of the through electrode and the second surface of the semiconductor substrate.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other;
- a through hole provided in the semiconductor substrate;
- a resin member provided in the through hole and having a part protruding relative to the second surface;
- a through electrode provided in the through hole between the resin member and an inner surface of the through hole, a tip of the through electrode protruding relative to the second surface and overlaying the protruding part of the resin member to form a bump electrode;
- an insulation film covers the inner surface of the through hole;
- and
- a metal layer provided in the through hole between the insulation film and the through electrode, a tip of the metal layer protruding relative to the second surface and terminating at a location between the through electrode tip of the through electrode and the second surface of the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.