Stacked semiconductor devices

A stacked semiconductor device comprising:

• a first semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the first semiconductor device having active circuitry and having a beveled edge on at least one edge of the first semiconductor device;
• a second semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the second semiconductor device having active circuitry and having a beveled edge on at least one edge of the second semiconductor device;
• a third semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the third semiconductor device having active circuitry and having a beveled edge on at least one edge of the third semiconductor device;
• a fourth semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the fourth semiconductor device having active circuitry and having a beveled edge on at least one edge of the fourth semiconductor device, wherein:
• the first major surface of the first semiconductor device faces the first major surface of the second semiconductor device such that the first major surfaces of the first and second semiconductor devices are between the second major surfaces of the first and second semiconductor devices and wherein the beveled edge of the first semiconductor device faces the beveled edge of the second semiconductor device such that a first opening is formed between the beveled edges of the first and second semiconductor devices on a first vertical side of the stacked semiconductor device;
• the first major surface of the third semiconductor device faces the first major surface of the fourth semiconductor device such that the first major surfaces of the third and fourth semiconductor devices are between the second major surfaces of the third and fourth semiconductor devices and wherein the beveled edge of the third semiconductor device faces the beveled edge of the fourth semiconductor device such that a second opening is formed between the beveled edges of the third and fourth semiconductor devices on the first vertical side of the stacked semiconductor device;
• and
• the second major surface of the second semiconductor device faces the second major surface of the third semiconductor device, such that the second major surfaces of the second and third semiconductor devices are between the first major surfaces of the second and third semiconductor devices;
• a heat sink 806 attached to the first vertical side of the stacked semiconductor device, the heat sink having a first protruding portion inserted into the first opening between the beveled edges of the first and second semiconductor devices and a second protruding portion inserted into the second opening between the beveled edges of the third and fourth semiconductor devices.