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US 8,796,819 B2Granted
Non-volatile memory device including a variable resistance material
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-hong Lee, Choong-rae Cho, Stefanovich Genrikh
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Abstract
A non-volatile memory device including a variable resistance material is provided. The non-volatile memory device may include a buffer layer, a variable resistance material layer and/or an upper electrode, for example, sequentially formed on a lower electrode. A schottky barrier may be formed on an interface between the buffer layer and the lower electrode. The variable resistance material layer may be formed with a variable resistance property.
Claims13
A non-volatile memory device including a variable resistance material, the memory device comprising:
- a lower electrode;
- a buffer layer on the lower electrode, and a schottky barrier on an interface between the buffer layer and the lower electrode;
- a variable resistance material layer on the buffer layer, wherein the variable resistance material layer has a variable resistance property;
- and
- an upper electrode on the variable resistance material layer,
- wherein the non-volatile memory device operates without an additional switching device, and
- the lower electrode, the buffer layer, the variable resistance material layer and the upper electrode are in a stacked structure.
4 more elements
Dependencies are inferred from the claim text.