Semiconductor device

A semiconductor device comprising:

• a multilayer substrate having upper and lower surfaces and a permittivity;
• a semiconductor element secured to said upper surface of said multilayer substrate;
• an intra-substrate via that is connected electrically to said semiconductor element and located in said multilayer substrate, extending to said lower surface of said multilayer substrate;
• a first metal pattern located on a portion of said lower surface of said multilayer substrate;
• a second metal pattern in contact with a lower end of said intra-substrate via;
• a dielectric having a higher permittivity than the permittivity of said multilayer substrate and located on said lower surface of said multilayer substrate, covering said first and second metal patterns;
• a first intra-dielectric via located in said dielectric, connected at an upper end to said first metal pattern, and extending to a lower surface of said dielectric;
• a second intra-dielectric via located in said dielectric, connected at an upper end to said second metal pattern, and extending to said lower surface of said dielectric;
• a ground pattern connected to a lower end of said first intra-dielectric via;
• and
• a bottom surface electrode connected to a lower end of said second intra-dielectric via, wherein
• a portion of said first metal pattern is disposed on said dielectric directly opposite a portion of said bottom surface electrode, and
• said bottom surface electrode, said dielectric, and said first metal pattern, together, constitute a bypass capacitor.