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US 8,796,804 B2Granted
Forming sensing elements above a semiconductor substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKe Chun Liu, Kuan-Chieh Huang, Chin-Min Lin, Ken Wen-Chien Fu, Mingo Lin
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Abstract
An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.
Claims14
An integrated circuit structure comprising:
- a substrate;
- an inter-layer dielectric layer;
- a plurality of inter-metal dielectric layers over the inter-layer dielectric layer;
- a first passivation layer over the plurality of inter-metal dielectric layers, wherein the first passivation layer is formed of a homogenous dielectric material;
- a first opening in the first passivation layer;
- a sensing element configured to sense photons received from over the sensing element, wherein the sensing element is exposed through the first opening, wherein the sensing element is a single sensing element separated from remaining sensing elements over the substrate, wherein the first passivation layer comprises a first portion overlapping edge portions of the sensing element, and a second portion encircling and contacting edges of the sensing element;
- and
- a first electrode and a second electrode underlying and in contact with the sensing element.
5 more elements
An integrated circuit structure comprising:
- a semiconductor substrate;
- a plurality of metallization layers over the semiconductor substrate;
- a first passivation layer over the plurality of metallization layers, wherein an entirety of the first passivation layer is formed of a same homogenous material;
- a bond pad in the first passivation layer;
- a first electrode and a second electrode in the first passivation layer, wherein a bottom surface of the bond pad and a bottom surface of the first electrode are coplanar, and wherein the bond pad and the first electrode are formed of same materials;
- a sensing element configured to sense photons over and contacting the first electrode and the second electrode, wherein the sensing element is a single sensing element separated from other sensing elements that are over the semiconductor substrate, wherein the sensing element is in the first passivation layer, and comprising a top surface lower than a top surface of the first passivation layer, and a bottom surface higher than a bottom surface of the first passivation layer;
- and
- a second passivation layer over the first passivation layer, wherein the bond pad is exposed through the second passivation layer.
5 more elements
Dependencies are inferred from the claim text.