Image sensor and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorYoun-Sub Lim
Life of this patent
Estimating the term…
Abstract
An image sensor includes: a substrate having a plurality of unit pixel region; a light receiving element formed in the substrate at the unit pixel region; an interlayer dielectric layer formed over the substrate; a lightguide formed in the interlayer dielectric layer for the light receiving element; a light focusing pattern formed over the interlayer dielectric layer at the pixel region; a planarization layer formed over the substrate and covering the light focusing pattern; and a lens formed over the planarization layer at the pixel region.
Claims10
An image sensor comprising:
- a substrate having a pixel region;
- a light receiving element formed in the substrate at the unit pixel region;
- an interlayer dielectric layer formed over the substrate;
- a lightguide formed in the interlayer dielectric layer for the light receiving element;
- a light focusing pattern formed over the interlayer dielectric layer at the pixel region;
- a planarization layer formed over the substrate and covering the light focusing pattern;
- and
- a lens formed over the planarization layer at the pixel region,
- wherein the light focusing pattern is formed in a conical shape or a pyramid shape, and is formed of a material having a larger refractive index than the lightguide in order to refract a light to satisfy a total reflection condition of light incident on the lightguide.
A method for fabricating an image sensor, comprising:
- forming a plurality of light receiving elements in the substrate at a plurality of unit pixel regions, respectively;
- forming an interlayer dielectric layer over the substrate;
- forming a plurality of lightguides through the interlayer dielectric layer for the plurality of light receiving elements, respectively;
- forming a plurality of light focusing patterns over the interlayer dielectric layer at the plurality of unit pixel regions, respectively;
- forming a planarization layer over the entire upper surface of the substrate such that the planarization layer covers the plurality of light focusing patterns;
- and
- forming a plurality of lenses over the planarization layer at the plurality of unit pixel regions, respectively,
- wherein an edge of each of the plurality of light focusing patterns is in contact with an edge of an adjacent light focusing pattern of the plurality of light focusing patterns, and
- wherein each of the light focusing patterns is formed of a material having a larger refractive index than the lightguide in order to refract a light to satisfy a total reflection condition of light incident on the lightguide.
An image sensor comprising:
- a substrate having a plurality of pixel regions;
- a plurality of light receiving elements formed in the substrate at the plurality of pixel regions;
- an interlayer dielectric layer formed over the substrate;
- a plurality of lightguides formed in the interlayer dielectric layer for the plurality of light receiving elements;
- a plurality of light focusing patterns formed over the interlayer dielectric layer at the plurality of pixel regions;
- a planarization layer formed over the substrate and covering the plurality of light focusing patterns;
- and
- a plurality of lens formed over the planarization layer at the plurality of pixel regions,
- wherein an edge of each of the plurality of light focusing patterns is in contact with an edge of an adjacent light focusing pattern of the plurality of light focusing patterns, and
- wherein each of the light focusing patterns is formed of a material having a larger refractive index than the lightguide in order to refract a light to satisfy a total reflection condition of light incident on the lightguide.
Dependencies are inferred from the claim text.