Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

A non-volatile memory device, comprising:

• a bottom electrode;
• a fixed magnetic layer disposed above the bottom electrode;
• a dielectric layer disposed above the fixed magnetic layer;
• a free magnetic layer disposed above the dielectric layer;
• a conductive oxide material layer disposed on the free magnetic layer, wherein the free magnetic layer comprises iron/cobalt (Fe/Co) atoms, wherein at least a portion of the Fe/Co atoms at an interface between the conductive oxide material layer and the free magnetic layer are oxidized, wherein the free magnetic layer comprises CoFeB, and wherein the interface between the conductive oxide material layer and the free magnetic layer provides a perpendicular magnetic component for the non-volatile memory device;
• a top electrode disposed above the conductive oxide material layer;
• and
• a transistor electrically connected to the top or the bottom electrode, a source line, and a word line.

A material layer stack for a magnetic tunneling junction, the material layer stack comprising:

• a fixed magnetic layer;
• a dielectric layer disposed above the fixed magnetic layer;
• a free magnetic layer disposed above the dielectric layer;
• a conductive oxide material layer disposed on the free magnetic layer;
• and
• one or more pairs of alternating magnetic and non-magnetic layers disposed on the conductive oxide material layer, with a magnetic layer disposed on the conductive oxide material layer, wherein an interface between the conductive oxide material layer and the magnetic layer provides a perpendicular magnetic component for the magnetic tunneling junction.

A non-volatile memory device, comprising:

• a bottom electrode;
• a fixed magnetic layer disposed above the bottom electrode;
• a dielectric layer disposed above the fixed magnetic layer;
• a free magnetic layer disposed above the dielectric layer;
• a conductive oxide material layer disposed on the free magnetic layer;
• a top electrode disposed above the conductive oxide material layer;
• one or more pairs of alternating magnetic and non-magnetic layers disposed on the conductive oxide material layer, below the top electrode, with a magnetic layer disposed on the conductive oxide material layer, wherein an interface between the conductive oxide material layer and the magnetic layer provides a perpendicular magnetic component for the non-volatile memory device;
• and
• a transistor electrically connected to the top or the bottom electrode, a source line, and a word line.