Memory arrays and methods of forming electrical contacts
AssigneeMicron Technology, Inc.
InventorRichard T. Housley
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AssigneeMicron Technology, Inc.
InventorRichard T. Housley
Estimating the term…
Some embodiments include methods of forming electrical contacts. A row of semiconductor material projections may be formed, with the semiconductor material projections containing repeating components of an array, and with a terminal semiconductor projection of the row comprising a contact location. An electrically conductive line may be along said row, with the line wrapping around an end of said terminal semiconductor projection and bifurcating into two branches that are along opposing sides of the semiconductor material projections. Some of the semiconductor material of the terminal semiconductor projection may be replaced with dielectric material, and then an opening may be extended into the dielectric material. An electrical contact may be formed within the opening and directly against at least one of the branches. Some embodiments include memory arrays.
A memory array, comprising:
A memory array, comprising:
A memory array, comprising:
Dependencies are inferred from the claim text.