Devices and methods to optimize materials and properties for replacement metal gate structures
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Christian Lavoie, Vijay Narayanan
Life of this patent
Estimating the term…
Abstract
Devices and methods for device fabrication include forming a gate structure with a sacrificial material. Silicided regions are formed on source/drain regions adjacent to the gate structure or formed at the bottom of trench contacts within source/drain areas. The source/drain regions or the silicided regions are processed to build resistance to subsequent thermal processing and adjust Schottky barrier height and thus reduce contact resistance. Metal contacts are formed in contact with the silicided regions. The sacrificial material is removed and replaced with a replacement conductor.
Claims17
A semiconductor device, comprising:
- a replacement gate metal structure having a metal gate conductor formed therein;
- doped source and drain regions formed adjacent to the replacement gate metal structure;
- a dielectric layer having contact trenches formed therein;
- silicided regions formed on the doped source and drain regions from inside a bottom of the contact trenches to localize silicidation;
- contacts formed over the silicided regions;
- and
- at least one silicide agglomeration resistant material integrated into the silicided regions to resist thermal degradation of the silicided regions and reduce contact resistance between the silicided regions and the contacts.
A semiconductor device, comprising:
- a replacement gate metal structure having a metal gate conductor formed therein;
- raised source and drain regions formed adjacent to the replacement gate metal structure;
- a dielectric layer having contact trenches formed therein;
- silicided regions formed on the raised source and drain regions from inside a bottom of the contact trenches to localize silicidation;
- contacts formed over the silicided regions;
- and
- at least one silicide agglomeration resistant material integrated into the silicided regions to resist thermal degradation of the silicided regions and reduce contact resistance between the silicided regions and the contacts.
A semiconductor device, comprising:
- a replacement gate metal structure having a metal gate conductor formed therein;
- source and drain regions formed adjacent to the replacement gate metal structure;
- a dielectric layer having contact trenches formed therein;
- silicided regions formed on the source and drain regions from inside a bottom of the contact trenches to localize silicidation;
- contacts formed over the silicided regions;
- and
- at least one silicide agglomeration resistant material, including carbon, integrated into the silicided regions to resist thermal degradation of the silicided regions and reduce contact resistance between the silicided regions and the contacts.
Dependencies are inferred from the claim text.