High-integration semiconductor memory device and method of manufacturing the same

A semiconductor memory device, comprising:

• a semiconductor substrate;
• an active region including a plurality of unit active regions and disposed over and spaced from the semiconductor substrate;
• a pair of word lines formed on a top surface and sides of the unit active region;
• a dummy word line disposed at a contact of the unit active regions and formed on top surfaces and sides of the unit active regions;
• a source region formed in the unit active region between the pair of word lines and electrically connected to the semiconductor substrate;
• drain regions formed in the unit active region between the pair of word lines and the dummy word line;
• first storage layers formed on the drain regions and electrically connected to the drain regions;
• and
• an insulating layer interposed between the semiconductor substrate and the active region, and the each source region is formed to penetrate the insulating layer.