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US 8,796,779 B2Granted
Semiconductor device
AssigneePanasonic Corporation
InventorsSatoru Ito, Yoshiya Moriyama, Hiroshi Ohkawa, Susumu Akamatsu
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Abstract
A first MIS transistor and a second MIS transistor of the same conductivity type are formed on an identical semiconductor substrate. An interface layer included in a gate insulating film of the first MIS transistor has a thickness larger than that of an interface layer included in a gate insulating film of the second MIS transistor.
Claims15
A semiconductor device comprising:
- a first MIS transistor and a second MIS transistor of an identical conductivity type provided on an identical semiconductor substrate,
- wherein the first MIS transistor includes a first gate insulating film formed on a first active region in the semiconductor substrate and a first gate electrode formed on the first gate insulating film,
- the second MIS transistor includes a second gate insulating film formed on a second active region in the semiconductor substrate and a second gate electrode formed on the second gate insulating film,
- the first gate insulating film includes a first interface layer being in contact with the semiconductor substrate and a first high dielectric constant insulating film formed on the first interface layer,
- the second gate insulating film includes a second interface layer being in contact with the semiconductor substrate and a second high dielectric constant insulating film formed on the second interface layer,
- the first interface layer has a thickness larger than that of the second interface layer, and
- each of the first interface layer and the second interface layer is made of a silicon dioxide film or a silicon oxynitride film.
4 more elements
Dependencies are inferred from the claim text.