Apparatuses and methods for transposing select gates

An apparatus, comprising:

• a number of memory cells;
• and
• N select gates electrically coupled to the number of memory cells, N being greater than 1, each select gate being separated into M segments, M being greater than 1,
• wherein at least some of the N select gates are transposed with one another at least once and the M segments of the N select gates are arranged such that less than M segments of a first select gate are adjacent to segments of a second select gate.

An apparatus, comprising:

• memory cells arranged in 3-dimensional memory cell strings;
• and
• select gates electrically coupled to the memory cells,
• wherein the select gates are separated into segments, the segments being arranged in a two-dimensional matrix, positions on the matrix being referenced by coordinates (i,j), and
• wherein a select gate segment at (i,j) is electrically coupled to a select gate segment at (i+1,j+1) and a select gate segment at (i,j+1) is electrically coupled to a select gate segment at (i+1,j).

An apparatus, comprising:

• a group of memory cells;
• and
• select gates electrically coupled to the group of memory cells,
• wherein at least one pair of the select gates has a transposition thereof such that a first one of the select gates of the pair of select gates is adjacent a third one of the select gates on a first side of the transposition and a second one of the select gates of the pair of select gates is adjacent the third one of the select gates on a second side of the transposition.

An apparatus, comprising:

• a group of memory cells;
• select gates electrically coupled to the group of memory cells, a pair of the select gates including a transposition thereof;
• and
• data lines electrically coupled to the select gates,
• wherein the transposition includes first conductive material of a first select gate being routed between segments of first conductive material of a second select gate, the segments of first conductive material of the second select gate being electrically coupled by an interconnect formed of a second conductive material routed over the first conductive material of the first select gate, and wherein the data lines are formed of a third conductive material.

An apparatus, comprising:

• a group of memory cells;
• and
• select gates electrically coupled to the group of memory cells, each of the select gates being separated into segments, a pair of the select gates including a transposition thereof,
• wherein the transposition includes a first interconnect between respective segments of a first select gate and a second interconnect between respective segments of a second select gate.

A method of forming transposed select gates, comprising:

• forming a select gate first conductive material into a matrix of segments in two dimensions;
• and
• forming a corresponding second conductive material over each segment, the corresponding second conductive material being electrically coupled near a respective end of each segment,
• wherein segments are coupled together into select gates traversing one of the two dimensions.