Protection component and electrostatic discharge protection device with the same

An electrostatic discharge (ESD) protection device, electrically connected to a first pad and a second pad, and comprising:

• a protection component, having a first connection terminal, a second connection terminal, a first control terminal, a second control terminal, and a third control terminal, wherein the protection component is respectively and electrically connected to the first pad and the second pad through the first connection terminal and the second connection terminal, and comprises
• a P-type substrate, comprising an N-type deep well, a first P-type well, and a second P-type well, wherein the first P-type well and the second P-type well are disposed in the N-type deep well;
• a first N-type transistor, formed in the N-type deep well and the first P-type well;
• and
• a second N-type transistor, formed in the N-type deep well and the second P-type well, wherein a first drain/source of the first N-type transistor and a first drain/source of the second N-type transistor are electrically connected to the first control terminal, a second drain/source of the first N-type transistor and a second drain/source of the second N-type transistor are respectively and electrically connected to the first connection terminal and the second connection terminal, gates of the first N-type transistor and the second N-type transistor are respectively and electrically connected to the second control terminal and the third control terminal;
• and
• a component controller, electrically connected to the first through the third control terminals, wherein when an electrostatic pulse occurs at the first pad or the second pad, the component controller turns on one of the first N-type transistor and the second N-type transistor to discharge the electrostatic pulse through a current path of the protection component, when a first operating signal and a second operating signal are supplied to the first pad and the second pad, the component controller turns off the first N-type transistor and the second N-type transistor according to the first operating signal and the second operating signal so that the protection component is incapable of generating the current path.