Semiconductor device including charged structure and methods for manufacturing a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsFranz Hirler, Markus Zundel
Life of this patent
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Abstract
A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.
Claims19
A semiconductor device, comprising:
- a trench region extending into a drift zone of a semiconductor body from a surface;
- a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure;
- a gate electrode in the trench region;
- a body region of a conductivity type other than the conductivity type of the drift zone;
- wherein
- the charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure;
- and wherein
- the charged insulating structure is arranged between a gate insulator and a field insulator along a vertical direction perpendicular to the surface, and wherein a thickness of the gate insulator along a lateral direction parallel to the surface is smaller than a thickness of the field insulator along the lateral direction.
A method for manufacturing a semiconductor device, comprising:
- forming a trench region extending into a drift zone of a semiconductor body from a surface;
- forming a first part of a dielectric structure in a first part of the trench region;
- forming a charged insulating structure as a second part of the dielectric structure on a sidewall in a second part of the trench region above the first part;
- forming a third part of the dielectric structure in the second part of the trench region;
- forming a fourth part of the dielectric structure above the charged insulating structure;
- forming a gate electrode in the trench region;
- and
- forming a body region adjoining the charged insulating structure.
A method for manufacturing a semiconductor device, comprising:
- forming a trench region extending into a drift zone of a semiconductor body from a surface;
- forming a charged insulating structure adjoining a sidewall of the trench region;
- forming a gate dielectric adjoining a sidewall of the trench region above the charged insulating structure;
- forming a gate electrode in the trench region;
- and
- forming a body region adjoining the charged insulating structure;
- and wherein forming the charged insulating structure includes:
- forming a charged insulating layer adjoining a sidewall of the trench region;
- and
- removing a part of the charged insulating layer in an upper part of the trench region;
- and wherein
- the gate electrode is formed self-aligned with the charged insulating structure.
A semiconductor device, comprising:
- a trench region extending into a drift zone of a semiconductor body from a surface;
- a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure;
- a gate electrode in the trench region;
- a body region of a conductivity type other than the conductivity type of the drift zone;
- a field electrode arranged between the gate electrode and a bottom side of the trench region;
- an insulator including nitride adjoining a top side of the field electrode;
- and wherein
- the charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.
Dependencies are inferred from the claim text.