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US 8,796,758 B2Granted
Selective epitaxial growth of semiconductor materials with reduced defects
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Chen-Hua Yu
Life of this patent
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Abstract
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material.
Claims20
A device comprising:
- a first semiconductor layer of a first semiconductor material;
- a first insulator layer disposed on the first semiconductor layer;
- and
- a semiconductor region having a first portion disposed in the first insulator layer and a second portion disposed in the first semiconductor layer, the second portion in contact with the first portion and having a width greater than a width of the first portion, and the first portion of a second semiconductor material different from the first semiconductor material.
1 more element
A device comprising:
- a substrate formed of a first semiconductor material;
- an insulator layer on the substrate;
- a first semiconductor layer of the first semiconductor material disposed between the substrate and the insulator layer;
- and
- a semiconductor region having a upper portion disposed in the insulator layer and a lower portion disposed in the first semiconductor layer, the lower portion in contact with the upper portion and having a width greater than a width of the upper portion, and the upper portion comprising a second semiconductor material different from the first material.
2 more elements
A device comprising:
- an oxide layer disposed over a substrate;
- a first semiconductor layer disposed between the substrate and the oxide layer and comprising a first semiconductor material;
- and
- a semiconductor region having a upper portion disposed in the oxide layer and a lower portion disposed in the first semiconductor layer, the lower portion in contact with the upper portion and having a width greater than a width of the upper portion, and the upper portion comprising a second semiconductor material different from the first material;
- wherein the second semiconductor material has a lattice constant different than a lattice constant of the first semiconductor material.
2 more elements
Dependencies are inferred from the claim text.