Nonvolatile semiconductor memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorMotoyuki Sato
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a first insulating layer on a semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The charge storage layer includes a floating gate layer on the first insulating layer, an interface insulating layer on the floating gate layer, a first charge trap layer on the interface insulating layer, and a second charge trap layer on the first charge trap layer, and a trap level of the second charge trap layer is lower than a trap level of the first charge trap layer.
Claims20
A nonvolatile semiconductor memory device comprising:
- a semiconductor layer;
- a first insulating layer on the semiconductor layer;
- a charge storage layer on the first insulating layer;
- a second insulating layer on the charge storage layer;
- and
- a control gate electrode on the second insulating layer,
- wherein the charge storage layer includes a floating gate layer on the first insulating layer, an interface insulating layer on the floating gate layer, a first charge trap layer on the interface insulating layer, and a second charge trap layer on the first charge trap layer, and
- a trap level of the second charge trap layer is lower than a trap level of the first charge trap layer.
Dependencies are inferred from the claim text.