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US 8,796,750 B2Granted
Edge illuminated photodiodes
AssigneeOSI Optoelectronics, Inc.
InventorsPeter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri
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Abstract
This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.
Claims12
A photodiode for detecting wavelengths of light in a range of 800nm to 1700nm, comprising:
- a substrate defined by a proximate facet, a distant facet, a bottom facet, and a top facet, wherein the proximate facet comprises a detectable area and is configured to first receive said wavelengths of light, wherein the distant facet is angled relative to said proximate facet such that portions of said wavelengths of light are reflected off said angled distant facet toward said top facet, and wherein said top facet comprises a doped region.
Dependencies are inferred from the claim text.