Back to results
US 8,796,748 B2Granted
Transistors, methods of manufacture thereof, and image sensor circuits
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFredrik Ramberg, Tse-Hua Lu, Tsun-Lai Hsu, Victor Chiang Liang, Chi-Feng Huang, Yu-Lin Wei, Shu Fang Fu
Life of this patent
Estimating the term…
Abstract
Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric disposed over the buried channel, and a gate layer disposed over the gate dielectric. The gate layer comprises an I shape in a top view of the transistor.
Claims20
A transistor, comprising:
- a buried channel disposed in a workpiece, wherein a top surface of the buried channel resides a non-zero distance beneath a top surface of the workpiece;
- a gate dielectric disposed over the buried channel;
- and
- a gate layer disposed over the gate dielectric, wherein the gate layer comprises an I shape in a top view of the transistor.
1 more element
A method of manufacturing a transistor, the method comprising:
- forming a buried channel in a workpiece, wherein a top surface of the buried channel resides a non-zero distance beneath a top surface of the workpiece;
- forming a gate dielectric over the buried channel;
- and
- forming a gate layer comprising an I shape in a top view over the gate dielectric.
1 more element
An image sensor circuit, comprising:
- a photo diode;
- a first transistor coupled to the photo diode;
- a second transistor coupled to the first transistor;
- and
- a third transistor coupled to the first transistor and the second transistor, wherein the second transistor or the third transistor comprises a channel disposed in a workpiece, a gate dielectric disposed over the channel, and a gate layer disposed over the gate dielectric, and wherein the gate layer comprises an I shape in a top view.
2 more elements
Dependencies are inferred from the claim text.