Light-sensitive component
AssigneeAms AG
InventorsHubert Enichlmair, Jochen Kraft, Georg Röhrer
Life of this patent
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Abstract
In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode.
Claims9
A light-sensitive component comprising:
- a semiconductor body;
- a first region of a first conductivity type, the first region adjoining a surface of the semiconductor body;
- a second region of a second conductivity type being opposite the first conductivity type, the second region adjoining the surface of the semiconductor body and being formed adjacent to the first region;
- and
- a gate electrode which is electrically insulated from the semiconductor body by an insulating gate dielectric, the gate electrode being arranged adjacent to the second region and above the first region,
- wherein the gate electrode is formed directly on the insulating gate dielectric transparent to visible light, the gate electrode having at least two structures separated from one another by a gap, such that the gate dielectric is uncovered in the gap, and the first region extends under the structures of the gate electrode and under the gap of the gate electrode, wherein the at least two structures are electrically connected to one another by material selected such that no potential difference or voltage drop exists between the at least two structures,
- wherein the semiconductor body has a low doping of the first conductivity type and the second region is embedded in the semiconductor body, and
- wherein a first contact to the second region and a second contact to the first region are formed at the surface of the semiconductor body.
Dependencies are inferred from the claim text.